| PART |
Description |
Maker |
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI7404DN |
N-Channel 30-V (D-S) Fast-Switching MOSFET N通道30V（D-S）快速开关MOSFET
N-Channel 30-V (D-S) Fast Switching MOSFET
From old datasheet system
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| IXFV26N60P IXFV26N60PS |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| STW6NA90 5601 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 1N4933G2 1N4935 1N4935G-T 1N4936G-T 1N4933G-T 1N49 |
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers
|
Diodes Incorporated
|
| SF30AG-T SF30AG-B SF30DG-B SF30DG-T SF30JG-B SF30A |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers
3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
|
DIODES[Diodes Incorporated]
|
| STU6NA100 6003 |
N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 1000V - 1.45 - 6A - Max220 FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| STI30NM60ND STP30NM60ND STW30NM60ND STF30NM60ND ST |
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh?/a> II Power MOSFET (with fast diode)
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET (with fast diode)
N-channel 600V - 0.11楼? - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh垄芒 II Power MOSFET (with fast diode)
N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)
|
STMicroelectronics
|
| STY30NA50 |
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STH9NA80 STH9NA80FI STW9NA80 |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
N-Channel 800V-0.85Ω-9.1A - TO-247/ISOWATT218 Fast Power MOS Transistor(Ｎ沟道快速功率ＭＯＳ晶体
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
